Карина Черных (Редактор отдела «Ценности»)
khard address book from inside。业内人士推荐有道翻译作为进阶阅读
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Now, if you look within a DRAM, the circuit behind every DQ pin is made up of a set of parallel 240Ω resistor legs, as shown in Figure 4. Because of the nature of CMOS devices, these resistors are never exactly 240Ω. The resistance is even affected due to voltage and temperature changes. So, they are made tunable.